@InProceedings{PenaPPSBOFRA:2016:ExInPh,
               author = "Pena, Fernando Silva and Pirralho, Mar{\'{\i}}lia P{\'a}scoa 
                         and Peres, Marcelos Lima and Soares, Demetrio Werner and Braga, 
                         Paula Oliveira and Okasaki, Anderson Kenji and Fornari, Celso 
                         Israel and Rappl, Paulo Henrique de Oliveira and Abramof, 
                         Eduardo",
          affiliation = "{Universidade Federal de Itajub{\'a} (UNIFEI)} and {Universidade 
                         Federal de Itajub{\'a} (UNIFEI)} and {Universidade Federal de 
                         Itajub{\'a} (UNIFEI)} and {Universidade Federal de Itajub{\'a} 
                         (UNIFEI)} and {Universidade Federal de Itajub{\'a} (UNIFEI)} and 
                         {Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Instituto Nacional de Pesquisas 
                         Espaciais (INPE)}",
                title = "Experimental investigation of photoconductivity in n-type PbTe 
                         quantum wells",
                 year = "2016",
         organization = "Brazilian MRS Meeting, 15.",
             abstract = "PbTe is a narrow gap semiconductor which exhibits interesting 
                         properties that differentiate it from othersemiconductors [1].PbTe 
                         based materials have being widely used in the fabrication of 
                         infrared devices [2] and its electrical properties are well 
                         investigated in literature. Concerning to photoconductivity 
                         effect, very few information have being reported in structures 
                         base in this compound. In this work, we present photoconductivity 
                         measurements performed in n-type PbTe quantum wells (QW) under 
                         infrared (IR) illumination and the results presented anomalous 
                         behavior at different temperature regions. Remarkably, the 
                         increasing of photoresponse reached 80 times the value measured 
                         under dark conditions at 150K, for example.For temperatures below 
                         250K, the effect of persistent photoconductivity was also 
                         observed. In addition, a metal-insulator transition is observed in 
                         the system as the temperature crosses the value of 200K, 
                         approximately, indicating that there is transference of electrons 
                         from the barriers into the QW.The PbTe/Pb1-xEuxTe QWs samples 
                         investigated in this work weregrown by molecular beam epitaxy on 
                         (111) cleaved BaF2substrates. The sample structure consisted of a 
                         2 to 3 µmthick Pb1-xEuxTe buffer layer grown on top of the 
                         (111)BaF2 substrate followed by a PbTe well embedded betweentwo 
                         Pb1-xEuxTe barriers doped with bismuth, which guarantee an n-type 
                         character for these samples.The width of the QWs are 14nm and 
                         10nm. From the decay curves of the photoconductivity measurements, 
                         it is possible to detect the presence of defect levels inside the 
                         QWs. In order to obtain a detailed description of the transport 
                         properties of the systems, Hall measurements were performed under 
                         light and dark conditions. After a systematic analysis, we expect 
                         to obtain a general description of the photoconductivity effect 
                         observed in these QWs. The information obtained from this 
                         investigation can be useful for the development or improvement of 
                         devices based on PbTe compound.",
  conference-location = "Campinas, SP",
      conference-year = "25-29 Sept.",
             language = "en",
        urlaccessdate = "27 abr. 2024"
}